Publications
"Comparison between high-field piezoresistive coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress", J. Appl. Phys., vol. 103, pp. 113704-1–113704-7, JUN, 2008.
, "Critical Discussion on (100) and (110) Orientation Dependent Transport: nMOS Planar and FinFET", Symposium on VLSI Technology, Kyoto, Japan, 2011.
, "Effect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors", J. Appl. Phys., vol. 105, pp. 054504-1–054504-11, MAR, 2009.
, "Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps", IEEE Electron Device Letters, vol. 31, pp. 3, 07/2010.
, "Future of Strained Si/Semiconductors in Nanoscale MOSFETs", (invited) Technical Digest 2006 International Electron Devices Meeting, pp. 681-684, December, 2006.
, "Gate direct tunneling currents in uniaxial stressed MOSFETs", Proc. 2007 Intl. Workshop on Electron Dev and Semiconductor Technology, pp. 149-152, June, 2007.
, "Hole mobility in silicon inversion layers: Stress and surface orientation", Journal of Applied Physics, vol. 102, pp. 084501-1–084501-7, JAN, 2007.
, "Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors", Appl. Phys. Lett., vol. 92, pp. 173507-1–173507-3, APR, 2008.
, "Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function", J. Appl. Phys., vol. 103, pp. 064510-1–065410-5, MAR, 2008.
, "Key Differences for Process-Induced Uniaxial vs. Substrate-Induced Biaxial Stressed Si and Ge Channel MOSFETs", IEDM Technical Digest: IEEE, pp. 221-224, December, 2004.
, "Laser-Induced Current Transients in Strained-Si Diodes", IEEE Transactions Nuclear Science, vol. 56, pp. 7, 12/2009.
, "Measurement of Conduction Band Deformation Potential Constants Using Gate Direct Tunneling Current in n-MOSFETs Under Mechanical Stress", Applied Physics Letters, vol. 89, pp. 073509, AUG, 2006.
, "Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium", Journal of Applied Physics, vol. 102, pp. 104507-1–104507-5, DEC, 2007.
, "A new measurement method for trap properties in insulators and semiconductors - Using electric field stimulated trap-to-band tunneling transitions in", Journal of Applied Physics, vol. 70, pp. 6864-6876, DEC, 1991.
, "Oxide field and thickness dependence of trap generation in 9-30 nm dry and dry/wet/dry oxides", Journal of Applied Physics, vol. 69, pp. 3986-3994, DEC, 1991.
, "Physics of Strain Effects in Semiconductors and Metal-Oxide-Semiconductor Field-effect Transistors", Journal of Applied Physics, vol. 101, pp. 104503-107524, JAN, 2007.
, "Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ( 1.5GPa) Channel Stress", IEEE Electron. Dev. Lett., vol. 28, pp. 58-61, JAN, 2007.
, "Positive charge generation in SiO2 by electron-impact-emission of trapped electrons", Journal of Applied Physics, vol. 72, pp. 4683-4695, NOV, 1992.
, "Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown", J. Appl. Phys., vol. 105, pp. 044503-1–044503-5, FEB, 2009.
, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.
, "Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node", 2008 VLSI Symposium on VLSI Technology, pp. 182-183, October, 2008.
, "Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon", Journal of Applied Physics, vol. 108, no. 9, pp. 093716-24, 11/2010.
, "Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors", Appl. Phys. Lett., vol. 93, pp. 153505-1–153505-3, OCT, 2008.
, "Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors", J. Appl. Phys., vol. 109, pp. 9, 06/2011.
, "Strain-induced Changes in the Gate Tunneling Currents in p-channel Metal-Oxide-Semiconductor Field-Effect Transistors", Applied Phys. Lett., vol. 88, pp. 052108, JAN, 2006.
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