Measurement of Conduction Band Deformation Potential Constants Using Gate Direct Tunneling Current in n-MOSFETs Under Mechanical Stress

TitleMeasurement of Conduction Band Deformation Potential Constants Using Gate Direct Tunneling Current in n-MOSFETs Under Mechanical Stress
Publication TypeJournal Article
Year of Publication2006
AuthorsLim, J., X. Yang, T. Nishida, and S. Thompson
JournalApplied Physics Letters
Volume89
Pagination073509
Date PublishedAUG
DOI10.1063/1.2245373