Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility

TitleSimulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility
Publication TypeJournal Article
Year of Publication2010
AuthorsChu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson
JournalJ. Appl. Phys.
Volume108
Start Page104502
Pagination6
Date Published11/2010
DOI10.1063/1.3500465
Refereed DesignationRefereed