Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors

TitleStrain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors
Publication TypeJournal Article
Year of Publication2011
AuthorsYang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson
JournalJ. Appl. Phys.
Volume109
Start Page3603023
Pagination9
Date Published06/2011
DOI10.1063/1.3603023
Refereed DesignationRefereed