Title | Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors |
Publication Type | Journal Article |
Year of Publication | 2011 |
Authors | Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson |
Journal | J. Appl. Phys. |
Volume | 109 |
Start Page | 3603023 |
Pagination | 9 |
Date Published | 06/2011 |
DOI | 10.1063/1.3603023 |
Refereed Designation | Refereed |