| Title | Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson |
| Journal | J. Appl. Phys. |
| Volume | 109 |
| Start Page | 3603023 |
| Pagination | 9 |
| Date Published | 06/2011 |
| DOI | 10.1063/1.3603023 |
| Refereed Designation | Refereed |
