Key Differences for Process-Induced Uniaxial vs. Substrate-Induced Biaxial Stressed Si and Ge Channel MOSFETs

TitleKey Differences for Process-Induced Uniaxial vs. Substrate-Induced Biaxial Stressed Si and Ge Channel MOSFETs
Publication TypeConference Paper
Year of Publication2004
AuthorsThompson, S., G-Y. Sun, K. Wu, and T. Nishida
Conference NameIEDM Technical Digest
Date PublishedDecember
PublisherIEEE