Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown

TitleReliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown
Publication TypeJournal Article
Year of Publication2009
AuthorsChoi, Y., H. W. Park, T. Nishida, and S. Thompson
JournalJ. Appl. Phys.
Volume105
Pagination044503-1โ€“044503-5
Date PublishedFEB
DOI10.1063/1.3074299