| Title | Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown |
| Publication Type | Journal Article |
| Year of Publication | 2009 |
| Authors | Choi, Y., H. W. Park, T. Nishida, and S. Thompson |
| Journal | J. Appl. Phys. |
| Volume | 105 |
| Pagination | 044503-1–044503-5 |
| Date Published | FEB |
| DOI | 10.1063/1.3074299 |
