Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function

TitleImpact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function
Publication TypeJournal Article
Year of Publication2008
AuthorsChoi, Y., T. Numata, T. Nishida, R. Harris, and S. Thompson
JournalJ. Appl. Phys.
Volume103
Pagination064510-1–065410-5
Date PublishedMAR
DOI10.1063/1.2838234