A new measurement method for trap properties in insulators and semiconductors - Using electric field stimulated trap-to-band tunneling transitions in

TitleA new measurement method for trap properties in insulators and semiconductors - Using electric field stimulated trap-to-band tunneling transitions in
Publication TypeJournal Article
Year of Publication1991
AuthorsThompson, S., and T. Nishida
JournalJournal of Applied Physics
Volume70
Pagination6864-6876
Date PublishedDEC
DOI10.1063/1.349810