Publications

Young, C., M. Baykan, A. Agarwal, H. Madan, K. Akarvardar, C. Hobbs, I. Ok, W. Taylor, C.E. Smith, M.M. Hussain, et al., "Critical Discussion on (100) and (110) Orientation Dependent Transport: nMOS Planar and FinFET", Symposium on VLSI Technology, Kyoto, Japan, 2011.

Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson, "Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors", J. Appl. Phys., vol. 109, pp. 9, 06/2011.

Koehler, A. D., A. Gupta, M. Chu, S. Parthasarathy, K. J. Linthicum, J. W. Johnson, T. Nishida, and S. Thompson, "Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps", IEEE Electron Device Letters, vol. 31, pp. 3, 07/2010.

Chu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.

Baykan, M., S. Thompson, and T. Nishida, "Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon", Journal of Applied Physics, vol. 108, no. 9, pp. 093716-24, 11/2010.

Lim, J-S., A. Acosta, S. Thompson, G. Bosman, E. Simoen, and T. Nishida, "Effect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors", J. Appl. Phys., vol. 105, pp. 054504-1–054504-11, MAR, 2009.

Park, H. W., D. J. Cummings, R. Arora, J. A. Pellish, R. Reed, R. D. Schrimpf, D. McMorrow, S. E. Armstrong, U. Roh, T. Nishida, et al., "Laser-Induced Current Transients in Strained-Si Diodes", IEEE Transactions Nuclear Science, vol. 56, pp. 7, 12/2009.

Choi, Y., H. W. Park, T. Nishida, and S. Thompson, "Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown", J. Appl. Phys., vol. 105, pp. 044503-1–044503-5, FEB, 2009.

Chu, M., T. Nishida, X. Lu, N. Mohta, and S. Thompson, "Comparison between high-field piezoresistive coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress", J. Appl. Phys., vol. 103, pp. 113704-1–113704-7, JUN, 2008.

Choi, Y., T. Nishida, and S. Thompson, "Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors", Appl. Phys. Lett., vol. 92, pp. 173507-1–173507-3, APR, 2008.

Choi, Y., T. Numata, T. Nishida, R. Harris, and S. Thompson, "Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function", J. Appl. Phys., vol. 103, pp. 064510-1–065410-5, MAR, 2008.

Suthram, S., Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, A. D. Koehler, A. Acosta, et al., "Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node", 2008 VLSI Symposium on VLSI Technology, pp. 182-183, October, 2008.

Son, S. Y., Y. Choi, P. Kumar, H. W. Park, T. Nishida, R. K. Singh, and S. Thompson, "Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors", Appl. Phys. Lett., vol. 93, pp. 153505-1–153505-3, OCT, 2008.

Yang, X., S. Parthasarathy, Y. Sun, A. D. Koehler, T. Nishida, and S. Thompson, "Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms", Appl. Phys. Lett., vol. 93, pp. 243503-1–243503-3, DEC, 2008.

Park, H. W., S. K. Dixit, Y. Choi, R. D. Schrimpf, E. Filangeri, T. Nishida, and S. Thompson, "Total Ionizing Dose Effects on Strained HfO2-based nMOSFETs", IEEE Transactions on Nuclear Science, vol. 55, pp. 2981-2985, DEC, 2008.

Yang, X., Y. Choi, T. Nishida, and S. Thompson, "Gate direct tunneling currents in uniaxial stressed MOSFETs", Proc. 2007 Intl. Workshop on Electron Dev and Semiconductor Technology, pp. 149-152, June, 2007.

Sun, G-Y., Y. Sun, T. Nishida, and S. Thompson, "Hole mobility in silicon inversion layers: Stress and surface orientation", Journal of Applied Physics, vol. 102, pp. 084501-1–084501-7, JAN, 2007.

Choi, Y., J-S. Lim, T. Numata, T. Nishida, T. Nishida, and S. Thompson, "Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium", Journal of Applied Physics, vol. 102, pp. 104507-1–104507-5, DEC, 2007.

Sun, Y., S. Thompson, and T. Nishida, "Physics of Strain Effects in Semiconductors and Metal-Oxide-Semiconductor Field-effect Transistors", Journal of Applied Physics, vol. 101, pp. 104503-107524, JAN, 2007.

Suthram, S., J. Ziegert, T. Nishida, and S. Thompson, "Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ( 1.5GPa) Channel Stress", IEEE Electron. Dev. Lett., vol. 28, pp. 58-61, JAN, 2007.

Thompson, S., S. Suthram, Y. Sun, G-Y. Sun, S. Parthasarathy, M. Chu, and T. Nishida, "Future of Strained Si/Semiconductors in Nanoscale MOSFETs", (invited) Technical Digest 2006 International Electron Devices Meeting, pp. 681-684, December, 2006.

Lim, J., X. Yang, T. Nishida, and S. Thompson, "Measurement of Conduction Band Deformation Potential Constants Using Gate Direct Tunneling Current in n-MOSFETs Under Mechanical Stress", Applied Physics Letters, vol. 89, pp. 073509, AUG, 2006.

Yang, X., J. Lim, G-Y. Sun, K. Wu, T. Nishida, and S. Thompson, "Strain-induced Changes in the Gate Tunneling Currents in p-channel Metal-Oxide-Semiconductor Field-Effect Transistors", Applied Phys. Lett., vol. 88, pp. 052108, JAN, 2006.

Thompson, S., G-Y. Sun, Y. Choi, and T. Nishida, "Uniaxial Process Induced Strained Si: Extending the CMOS Roadmap", IEEE Trans. Electron Dev., vol. 53, pp. 1010-1020, MAY, 2006.

Thompson, S., G-Y. Sun, K. Wu, and T. Nishida, "Key Differences for Process-Induced Uniaxial vs. Substrate-Induced Biaxial Stressed Si and Ge Channel MOSFETs", IEDM Technical Digest: IEEE, pp. 221-224, December, 2004.