Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms

Title	Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms
Publication Type	Journal Article
Year of Publication	2008
Authors	Yang, X., S. Parthasarathy, Y. Sun, A. D. Koehler, T. Nishida, and S. Thompson
Journal	Appl. Phys. Lett.
Volume	93
Pagination	243503-1–243503-3
Date Published	DEC
DOI	10.1063/1.3046725