Publications

Smith, C. S., K. Sondhi, S. C. Mills, J. S. Andrew, H. Z. Fan, T. Nishida, and D. P. Arnold, "Screen-printable and stretchable hard magnetic ink formulated from barium hexaferrite nanoparticles", Journal of Materials Chemistry C, 2020.

Smith, C. S., K. Sondhi, B. Y. Jimenez, H. Z. Fan, T. Nishida, and D. P. Arnold, "Screen-printed inductive silver ink strain sensor on stretchable TPU substrate", 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), Virtual, 2020.

Zhao, L., D. Hou, T-M. Usher, T. Iamsasri, C. M. Fancher, J. S. Forrester, T. Nishida, S. Moghaddam, and J. L. Jones, "Structure of 3 at.% and 9 at.% Si-doped HfO 2 from combined refinement of X-ray and neutron diffraction patterns", Journal of Alloys and Compounds, vol. 646, pp. 655 - 661, Jan-10-2015.

Phipps, A., and T. Nishida, "System Modeling of Piezoelectric Energy Harvesters", IEEE Trans. Power Electronics, vol. 27, issue 2, 2012.

Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson, "Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors", J. Appl. Phys., vol. 109, pp. 9, 06/2011.

Chu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.

Baykan, M., S. Thompson, and T. Nishida, "Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon", Journal of Applied Physics, vol. 108, no. 9, pp. 093716-24, 11/2010.

Suthram, S., Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, A. D. Koehler, A. Acosta, et al., "Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node", 2008 VLSI Symposium on VLSI Technology, pp. 182-183, October, 2008.

Son, S. Y., Y. Choi, P. Kumar, H. W. Park, T. Nishida, R. K. Singh, and S. Thompson, "Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors", Appl. Phys. Lett., vol. 93, pp. 153505-1–153505-3, OCT, 2008.

Martin, D., K. Kadirvel, T. Nishida, and M. Sheplak, "A Surface Micromachined Capacitive Microphone for Aeroacoustic Applications", Solid-State Sensor, Actuator and Microsystems Workshop, Hilton Head, SC, June, 2008.

Kadirvel, S., F. Liu, S. Horowitz, T. Nishida, K. Ngo, L. Cattafesta, and M. Sheplak, "A Self-Powered Wireless Active Acoustic Liner", 12th AIAA/CEAS Aeroacoustics Conference, Cambridge, MA, May, 2006.

Dieme, R., G. Bosman, M. Sheplak, and T. Nishida, "Source of Excess Noise in Silicon Piezoresistive Microphones", J. Acoustical Society of America, vol. 119, pp. 2710-2720, MAY, 2006.

Yang, X., J. Lim, G-Y. Sun, K. Wu, T. Nishida, and S. Thompson, "Strain-induced Changes in the Gate Tunneling Currents in p-channel Metal-Oxide-Semiconductor Field-Effect Transistors", Applied Phys. Lett., vol. 88, pp. 052108, JAN, 2006.

Sanchez, J. C., N. Alba, T. Nishida, C. Batich, and P. Carney, "Structural Modifications in Chronic Microwire Electrodes for Cortical Neuroprosthetics: A Case Study", IEEE Trans. Neural Systems and Rehab. Engr., vol. 14, no. 2, pp. 217-221, JUN, 2006.

Martin, D., K. Kadirvel, J. Liu, R. M. Fox, M. Sheplak, and T. Nishida, "Surface and Bulk Micromachined Dual Back-Plate Condenser Microphone", 18th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2005), Miami, FL, January, 2005.

Bhardwaj, S., M. Sheplak, and T. Nishida, "S/N Optimization and Noise Considerations for Piezoresistive Microphones", 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, Gainesville, FL, World Scientific, pp. 549-552, October, 2001.

Saini, R., S. Bhardwaj, T. Nishida, and M. Sheplak, "Scaling Relations for Piezoresistive Microphones", International Mechanical Engineering Congress and Exposition, Orlando, FL, November, 2000.

Han, K., and T. Nishida, "Sequential substrate and channel hot electron injection to separate oxide and interface traps in n-MOST", Solid-State Electronics, vol. 38, pp. 105-113, JAN, 1995.