Publications

Thompson, S., and T. Nishida, "Positive charge generation in SiO2 by electron-impact-emission of trapped electrons", Journal of Applied Physics, vol. 72, pp. 4683-4695, NOV, 1992.

Thompson, S., and T. Nishida, "A new measurement method for trap properties in insulators and semiconductors - Using electric field stimulated trap-to-band tunneling transitions in", Journal of Applied Physics, vol. 70, pp. 6864-6876, DEC, 1991.

Thompson, S., and T. Nishida, "Tunneling and thermal emission of electrons from a distribution of shallow traps in SiO2", Applied Physics Letters, vol. 58, pp. 1262-1264, DEC, 1991.

Thompson, S., G-Y. Sun, Y. Choi, and T. Nishida, "Uniaxial Process Induced Strained Si: Extending the CMOS Roadmap", IEEE Trans. Electron Dev., vol. 53, pp. 1010-1020, MAY, 2006.

Thompson, S., S. Suthram, Y. Sun, G-Y. Sun, S. Parthasarathy, M. Chu, and T. Nishida, "Future of Strained Si/Semiconductors in Nanoscale MOSFETs", (invited) Technical Digest 2006 International Electron Devices Meeting, pp. 681-684, December, 2006.

Thompson, S., G-Y. Sun, K. Wu, and T. Nishida, "Key Differences for Process-Induced Uniaxial vs. Substrate-Induced Biaxial Stressed Si and Ge Channel MOSFETs", IEDM Technical Digest: IEEE, pp. 221-224, December, 2004.