Publications

Zhao, L., D. Hou, T-M. Usher, T. Iamsasri, C. M. Fancher, J. S. Forrester, T. Nishida, S. Moghaddam, and J. L. Jones, "Structure of 3 at.% and 9 at.% Si-doped HfO 2 from combined refinement of X-ray and neutron diffraction patterns", Journal of Alloys and Compounds, vol. 646, pp. 655 - 661, Jan-10-2015.

Lomenzo, P. D., Q. Takmeel, C. Zhou, C-C. Chung, S. Moghaddam, J. L. Jones, and T. Nishida, "Mixed Al and Si doping in ferroelectric HfO 2 thin films", Applied Physics Letters, vol. 107, issue 24, pp. 242903, Feb-12-2016, 2015.

Lomenzo, P. D., Q. Takmeel, C. M. Fancher, C. Zhou, N. G. Rudawski, S. Moghaddam, J. L. Jones, and T. Nishida, "Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium", IEEE Electron Device Letters, vol. 36, issue 8, pp. 766 - 768, Jan-08-2015.

Lomenzo, P. D., C-C. Chung, C. Zhou, J. L. Jones, and T. Nishida, "Doped Hf_0.5Zr _0.5O ₂ for high efficiency integrated supercapacitors", Applied Physics Letters, vol. 110, issue 23, pp. 232904, jun-09-2017.