| Title | Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium |
| Publication Type | Journal Article |
| Year of Publication | 2015 |
| Authors | Lomenzo, P. D., Q. Takmeel, C. M. Fancher, C. Zhou, N. G. Rudawski, S. Moghaddam, J. L. Jones, and T. Nishida |
| Journal | IEEE Electron Device Letters |
| Volume | 36 |
| Issue | 8 |
| Pagination | 766 - 768 |
| Date Published | Jan-08-2015 |
| ISSN | 0741-3106 |
| URL | http://ieeexplore.ieee.org/document/7123616/ |
| DOI | 10.1109/LED.2015.2445352 |
| Short Title | IEEE Electron Device Lett. |
