Publications
Found 156 results
Author Title Type [ Year] Filters: Author is Toshikazu Nishida [Clear All Filters]
"A new measurement method for trap properties in insulators and semiconductors - Using electric field stimulated trap-to-band tunneling transitions in", Journal of Applied Physics, vol. 70, pp. 6864-6876, DEC, 1991.
, "Oxide field and thickness dependence of trap generation in 9-30 nm dry and dry/wet/dry oxides", Journal of Applied Physics, vol. 69, pp. 3986-3994, DEC, 1991.
, "Tunneling and thermal emission of electrons from a distribution of shallow traps in SiO2", Applied Physics Letters, vol. 58, pp. 1262-1264, DEC, 1991.
, "Observation of threshold oxide electric field for trap generation in oxide films on silicon", Journal of Applied Physics, vol. 63, no. 12, pp. 5882-5884, DEC, 1988.
, "A physically based mobility model for MOSFET numerical simulation", IEEE Trans. Electron Devices, vol. 34, no. 2, pp. 310-320, FEB, 1987.
, "Thermal emission and capture rates of holes at the gold donor level in silicon", Journal of Applied Physics, vol. 62, no. 12, pp. 4773-4780, DEC, 1987.
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