Publications

Choi, Y., T. Nishida, and S. Thompson, "Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors", Appl. Phys. Lett., vol. 92, pp. 173507-1–173507-3, APR, 2008.

Choi, Y., T. Numata, T. Nishida, R. Harris, and S. Thompson, "Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function", J. Appl. Phys., vol. 103, pp. 064510-1–065410-5, MAR, 2008.

Choi, Y., H. W. Park, T. Nishida, and S. Thompson, "Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown", J. Appl. Phys., vol. 105, pp. 044503-1–044503-5, FEB, 2009.

Choi, Y., J-S. Lim, T. Numata, T. Nishida, T. Nishida, and S. Thompson, "Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium", Journal of Applied Physics, vol. 102, pp. 104507-1–104507-5, DEC, 2007.