Publications
Found 2 results
Author [ Title] Type Year Filters: Author is Rudawski, Nicholas G. [Clear All Filters]
"Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium", IEEE Electron Device Letters, vol. 36, issue 8, pp. 766 - 768, Jan-08-2015.
, "Tiered deposition of sub-5 nm ferroelectric Hf 1-x Zr x O 2 films on metal and semiconductor substrates", Applied Physics Letters, vol. 112, issue 19, pp. 192901, Jul-05-2018.
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