Publications

Found 4 results
Author [ Title(Desc)] Type Year
Filters: Author is Andrew D. Koehler  [Clear All Filters]
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Koehler, A. D., A. Gupta, M. Chu, S. Parthasarathy, K. J. Linthicum, J. W. Johnson, T. Nishida, and S. Thompson, "Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps", IEEE Electron Device Letters, vol. 31, pp. 3, 07/2010.
S
Chu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.
Suthram, S., Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, A. D. Koehler, A. Acosta, et al., "Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node", 2008 VLSI Symposium on VLSI Technology, pp. 182-183, October, 2008.
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Yang, X., S. Parthasarathy, Y. Sun, A. D. Koehler, T. Nishida, and S. Thompson, "Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms", Appl. Phys. Lett., vol. 93, pp. 243503-1–243503-3, DEC, 2008.