Publications

Lomenzo, P. D., Q. Takmeel, C. M. Fancher, C. Zhou, N. G. Rudawski, S. Moghaddam, J. L. Jones, and T. Nishida, "Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium", IEEE Electron Device Letters, vol. 36, issue 8, pp. 766 - 768, Jan-08-2015.

Walters, G., A. Shekhawat, N. G. Rudawski, S. Moghaddam, and T. Nishida, "Tiered deposition of sub-5 nm ferroelectric Hf _1-x Zr _x O ₂ films on metal and semiconductor substrates", Applied Physics Letters, vol. 112, issue 19, pp. 192901, Jul-05-2018.