News and events of Toshikazu Nishida's Research Group

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Dr. Nishida appointed Interim Associate Dean of Academic Affairs

We congratulate Dr. Toshi Nishida for his new appointment as Interim Associate Dean of Academic Affairs, beginning July 15, 2017. Dr. Nishida is Professor and Associate Chair of Research in the Department of Electrical and Computer Engineering (ECE) and an Affiliate Professor in the Department of Mechanical and Aerospace Engineering (MAE) at the University of Florida. He received his Ph.D. (1988) and M.S. degrees in Electrical and Computer engineering and B.S. degree in Engineering Physics at the University of Illinois at Urbana-Champaign. With colleagues and students, he has published over 150 refereed journal and conference papers and received three best paper awards. He has mentored 23 PhD students. His current research portfolio with graduate students includes high performance multifunctional semiconductor devices and systems, low power memory and device technologies, and novel three-dimensional fabrication. He has 11 issued U.S. patents. Dr. Nishida is the Director of the NSF Industry/University Cooperative Research Center on Multi-functional Integrated System Technology (MIST) launched in 2014 (www.mist-center.org). The vision of the MIST Center is innovating More than Moore technologies for smart systems in the Internet of Things era. He is a co-founder of the Interdisciplinary Microsystems Group. He received the 2003 College of Engineering Teacher of the Year award, the 2017 University of Florida Term Professorship award, and is an Alan Hastings Faculty Fellow. He is a senior member of the IEEE.

IMG Seminar Series: Origins of Asymmetry in Ferroelectric Si:HfO2 Thin Films with TaN Electrodes

Event date: 
Fri, 09/18/2015 - 3:30pm

Patrick Lomenzo will present on ferroelectricity in HfO2-based thin films:

Ferroelectricity in HfO2-based thin films offers an intriguing pathway toward the realization of ferroelectric devices for next generation memory technologies. Understanding the reliability characteristics and underlying defects of HfO2 ferroelectrics is of critical importance for its successful adoption in emerging memory devices. The observation of asymmetric ferroelectric properties of HfO2 thin films with TaN electrodes is discussed in the context of charged defects and the chemical properties of the electrode interfaces.