Publications

Found 4 results
Author Title Type [ Year(Desc)]
Filters: Author is S. Parthasarathy  [Clear All Filters]
2006
Thompson, S., S. Suthram, Y. Sun, G-Y. Sun, S. Parthasarathy, M. Chu, and T. Nishida, "Future of Strained Si/Semiconductors in Nanoscale MOSFETs", (invited) Technical Digest 2006 International Electron Devices Meeting, pp. 681-684, December, 2006.
2008
Suthram, S., Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, A. D. Koehler, A. Acosta, et al., "Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node", 2008 VLSI Symposium on VLSI Technology, pp. 182-183, October, 2008.
Yang, X., S. Parthasarathy, Y. Sun, A. D. Koehler, T. Nishida, and S. Thompson, "Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms", Appl. Phys. Lett., vol. 93, pp. 243503-1–243503-3, DEC, 2008.
2010
Koehler, A. D., A. Gupta, M. Chu, S. Parthasarathy, K. J. Linthicum, J. W. Johnson, T. Nishida, and S. Thompson, "Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps", IEEE Electron Device Letters, vol. 31, pp. 3, 07/2010.