Process development and material characterization of polycrystalline Bi2Te3, PbTe, and PbSnSeTe thin films on silicon for millimeter-scale thermoelectric generators

TitleProcess development and material characterization of polycrystalline Bi2Te3, PbTe, and PbSnSeTe thin films on silicon for millimeter-scale thermoelectric generators
Publication TypeJournal Article
Year of Publication2008
AuthorsBoniche, I., B. C. Morgan, P. Taylor, C. D. Meyer, and D. P. Arnold
JournalJ. Vacuum Sci. Tech. A
Volume26
Pagination739-744
Date PublishedJUL
Abstract

In this work, deposition, patterning, and metallization of vapor-deposited polycrystalline thermoelectric (TE) thin films of Bi2Te3, PbTe, and PbSnSeTe on silicon (Si) substrates are investigated. These fundamental microfabrication methods are intended for use in integrating TE films into thermally-powered MEMS-based power generators. P-type polycrystalline Bi2Te3, PbTe, and PbSnSeTe films were successfully deposited on thermally oxidized (100) Si substrates to thicknesses ranging from 0.4

URLhttp://dx.doi.org/10.1116/1.2841522
DOI10.1116/1.2841522