Soft breakdown effects on MOS switch and passive mixer

TitleSoft breakdown effects on MOS switch and passive mixer
Publication TypeConference Paper
Year of Publication2004
AuthorsSadat, A., Y. Liu, J. Yuan, and H. Xie
Conference Name2004 IEEE International Reliability Physics Symposium.2004 IEEE International Reliability Physics Symposium. Proceedings
Date Published04/2004
PublisherIEEE
Conference LocationPhoenix, AZ, USA
Abstract

On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.

URLhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1315435&tag=1
DOI10.1109/RELPHY.2004.1315435