Title | Soft breakdown effects on MOS switch and passive mixer |
Publication Type | Conference Paper |
Year of Publication | 2004 |
Authors | Sadat, A., Y. Liu, J. Yuan, and H. Xie |
Conference Name | 2004 IEEE International Reliability Physics Symposium.2004 IEEE International Reliability Physics Symposium. Proceedings |
Date Published | 04/2004 |
Publisher | IEEE |
Conference Location | Phoenix, AZ, USA |
Abstract | On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded. |
URL | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1315435&tag=1 |
DOI | 10.1109/RELPHY.2004.1315435 |