|Title||Design and fabrication of an integrated CMOS-MEMS 3-axis accelerometer|
|Publication Type||Conference Paper|
|Year of Publication||2003|
|Authors||Xie, H., Z. Pan, W. Frey, and G. K. Fedder|
|Conference Name||Proc. of the 2003 Nanotechnology Conference|
|Conference Location||San Francisco, CA, USA|
|Keywords||3-axis, Accelerometer, CMOS-MEMS|
This paper reports a novel single structure, three-axis sensing accelerometer based on post-CMOS process. The resultant device incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without extra front-side lithography, or wafer bonding, which are required by other CMOS three-axis accelerometers. Behavioral simulation using NODAS and FEM simulation were used to validate the design. The overall structure size is about 1mm by 1mm. Noise floor of 0.1 mG/rtHz is expected in all three axes. Characterization is ongoing.