|Design and fabrication of an integrated CMOS-MEMS 3-axis accelerometer
|Year of Publication
|Xie, H., Z. Pan, W. Frey, and G. K. Fedder
|Proc. of the 2003 Nanotechnology Conference
|San Francisco, CA, USA
|3-axis, Accelerometer, CMOS-MEMS
This paper reports a novel single structure, three-axis sensing accelerometer based on post-CMOS process. The resultant device incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without extra front-side lithography, or wafer bonding, which are required by other CMOS three-axis accelerometers. Behavioral simulation using NODAS and FEM simulation were used to validate the design. The overall structure size is about 1mm by 1mm. Noise floor of 0.1 mG/rtHz is expected in all three axes. Characterization is ongoing.