Design and fabrication of an integrated CMOS-MEMS 3-axis accelerometer

TitleDesign and fabrication of an integrated CMOS-MEMS 3-axis accelerometer
Publication TypeConference Paper
Year of Publication2003
AuthorsXie, H., Z. Pan, W. Frey, and G. K. Fedder
Conference NameProc. of the 2003 Nanotechnology Conference
Conference LocationSan Francisco, CA, USA
Keywords3-axis, Accelerometer, CMOS-MEMS
Abstract

This paper reports a novel single structure, three-axis sensing accelerometer based on post-CMOS process. The resultant device incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without extra front-side lithography, or wafer bonding, which are required by other CMOS three-axis accelerometers. Behavioral simulation using NODAS and FEM simulation were used to validate the design. The overall structure size is about 1mm by 1mm. Noise floor of 0.1 mG/rtHz is expected in all three axes. Characterization is ongoing.

URLhttp://www.nsti.org/procs/Nanotech2003v2/9/M24.04