Electrospun ZnO Nanowire Based Ferroelectric Field-Effect Transistor using a Gate Dielectric Layer of Bi3.25Ba0.75Ti3O12 Thin Film

TitleElectrospun ZnO Nanowire Based Ferroelectric Field-Effect Transistor using a Gate Dielectric Layer of Bi3.25Ba0.75Ti3O12 Thin Film
Publication TypeConference Paper
Year of Publication2009
AuthorsKim, K-T., G. H. Kim, and Y.K. Yoon
Conference NameAmerican Vacuum Society 56th international Symposium
Date Published11/2009
Conference LocationSan Jose, CA, USA