Congratulations to Enamul and Dr. Feng on IEEE International Electron Devices Meeting (IEDM) Paper!

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At the IEEE International Electron Devices Meeting (IEDM) 2023 taking place in San Francisco, CA this week, ECE Florida Ph.D. student S M Enamul Hoque Yousuf, along with his advisor Prof. Philip Feng, reports on a new advancement in “More-than-Moore” devices using atomically thin semiconductors. In the paper (#17.4), the UF ECE group describes the demonstration of high-performance monolayer and bilayer MoS2 vibrating channel transistors (VCTs), which, for the first time, transduce the radio-frequency sub-nanometer-scale motions of semiconductor VCTs by directly reading out the small-signal drain-source current, without having to rely on a frequency-conversion or mixing circuit.