IMG @ IEEE IEDM 2018

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UF and IMG will be represented at the upcoming IEEE International Electron Device Meeting (IEDM) in December 2018 in San Francisco.

A Nano-Mechanical Resonator with 10nm Hafnium-Zirconium Oxide Ferroelectric Transducer (Oral) 
M. Ghatge, G. Walters, T. Nishida and R. Tabrizian 
University of Florida, USA

The IEEE International Electron Device Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.