UF and IMG will be represented at the upcoming IEEE International Electron Device Meeting (IEDM) in December 2017 in San Francisco.
High-Q Silicon Fin Bulk Acoustic Resonators for Signal Processing beyond the UHF (Oral)
M. Ramezani, M. Ghatge, and R. Tabrizian
University of Florida, USA
The IEEE International Electron Device Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.