Publications

Thompson, S., G-Y. Sun, Y. Choi, and T. Nishida, "Uniaxial Process Induced Strained Si: Extending the CMOS Roadmap", IEEE Trans. Electron Dev., vol. 53, pp. 1010-1020, MAY, 2006.

Thompson, S., and T. Nishida, "Tunneling and thermal emission of electrons from a distribution of shallow traps in SiO2", Applied Physics Letters, vol. 58, pp. 1262-1264, DEC, 1991.

Park, H. W., S. K. Dixit, Y. Choi, R. D. Schrimpf, E. Filangeri, T. Nishida, and S. Thompson, "Total Ionizing Dose Effects on Strained HfO2-based nMOSFETs", IEEE Transactions on Nuclear Science, vol. 55, pp. 2981-2985, DEC, 2008.

Yang, X., S. Parthasarathy, Y. Sun, A. D. Koehler, T. Nishida, and S. Thompson, "Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms", Appl. Phys. Lett., vol. 93, pp. 243503-1–243503-3, DEC, 2008.

Yang, X., J. Lim, G-Y. Sun, K. Wu, T. Nishida, and S. Thompson, "Strain-induced Changes in the Gate Tunneling Currents in p-channel Metal-Oxide-Semiconductor Field-Effect Transistors", Applied Phys. Lett., vol. 88, pp. 052108, JAN, 2006.

Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson, "Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors", J. Appl. Phys., vol. 109, pp. 9, 06/2011.

Son, S. Y., Y. Choi, P. Kumar, H. W. Park, T. Nishida, R. K. Singh, and S. Thompson, "Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors", Appl. Phys. Lett., vol. 93, pp. 153505-1–153505-3, OCT, 2008.

Baykan, M., S. Thompson, and T. Nishida, "Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon", Journal of Applied Physics, vol. 108, no. 9, pp. 093716-24, 11/2010.

Chu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.

Choi, Y., H. W. Park, T. Nishida, and S. Thompson, "Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown", J. Appl. Phys., vol. 105, pp. 044503-1–044503-5, FEB, 2009.

Thompson, S., and T. Nishida, "Positive charge generation in SiO2 by electron-impact-emission of trapped electrons", Journal of Applied Physics, vol. 72, pp. 4683-4695, NOV, 1992.

Suthram, S., J. Ziegert, T. Nishida, and S. Thompson, "Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ( 1.5GPa) Channel Stress", IEEE Electron. Dev. Lett., vol. 28, pp. 58-61, JAN, 2007.

Sun, Y., S. Thompson, and T. Nishida, "Physics of Strain Effects in Semiconductors and Metal-Oxide-Semiconductor Field-effect Transistors", Journal of Applied Physics, vol. 101, pp. 104503-107524, JAN, 2007.

Nishida, T., and S. Thompson, "Oxide field and thickness dependence of trap generation in 9-30 nm dry and dry/wet/dry oxides", Journal of Applied Physics, vol. 69, pp. 3986-3994, DEC, 1991.

Thompson, S., and T. Nishida, "A new measurement method for trap properties in insulators and semiconductors - Using electric field stimulated trap-to-band tunneling transitions in", Journal of Applied Physics, vol. 70, pp. 6864-6876, DEC, 1991.

Choi, Y., J-S. Lim, T. Numata, T. Nishida, T. Nishida, and S. Thompson, "Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium", Journal of Applied Physics, vol. 102, pp. 104507-1–104507-5, DEC, 2007.

Lim, J., X. Yang, T. Nishida, and S. Thompson, "Measurement of Conduction Band Deformation Potential Constants Using Gate Direct Tunneling Current in n-MOSFETs Under Mechanical Stress", Applied Physics Letters, vol. 89, pp. 073509, AUG, 2006.

Park, H. W., D. J. Cummings, R. Arora, J. A. Pellish, R. Reed, R. D. Schrimpf, D. McMorrow, S. E. Armstrong, U. Roh, T. Nishida, et al., "Laser-Induced Current Transients in Strained-Si Diodes", IEEE Transactions Nuclear Science, vol. 56, pp. 7, 12/2009.

Choi, Y., T. Numata, T. Nishida, R. Harris, and S. Thompson, "Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function", J. Appl. Phys., vol. 103, pp. 064510-1–065410-5, MAR, 2008.

Choi, Y., T. Nishida, and S. Thompson, "Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors", Appl. Phys. Lett., vol. 92, pp. 173507-1–173507-3, APR, 2008.

Sun, G-Y., Y. Sun, T. Nishida, and S. Thompson, "Hole mobility in silicon inversion layers: Stress and surface orientation", Journal of Applied Physics, vol. 102, pp. 084501-1–084501-7, JAN, 2007.

Koehler, A. D., A. Gupta, M. Chu, S. Parthasarathy, K. J. Linthicum, J. W. Johnson, T. Nishida, and S. Thompson, "Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps", IEEE Electron Device Letters, vol. 31, pp. 3, 07/2010.

Lim, J-S., A. Acosta, S. Thompson, G. Bosman, E. Simoen, and T. Nishida, "Effect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors", J. Appl. Phys., vol. 105, pp. 054504-1–054504-11, MAR, 2009.

Chu, M., T. Nishida, X. Lu, N. Mohta, and S. Thompson, "Comparison between high-field piezoresistive coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress", J. Appl. Phys., vol. 103, pp. 113704-1–113704-7, JUN, 2008.

Suthram, S., Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, A. D. Koehler, A. Acosta, et al., "Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node", 2008 VLSI Symposium on VLSI Technology, pp. 182-183, October, 2008.