Publications

Found 29 results
Author Title [ Type(Desc)] Year
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Conference Paper
Young, C., M. Baykan, A. Agarwal, H. Madan, K. Akarvardar, C. Hobbs, I. Ok, W. Taylor, C.E. Smith, M.M. Hussain, et al., "Critical Discussion on (100) and (110) Orientation Dependent Transport: nMOS Planar and FinFET", Symposium on VLSI Technology, Kyoto, Japan, 2011.
Thompson, S., S. Suthram, Y. Sun, G-Y. Sun, S. Parthasarathy, M. Chu, and T. Nishida, "Future of Strained Si/Semiconductors in Nanoscale MOSFETs", (invited) Technical Digest 2006 International Electron Devices Meeting, pp. 681-684, December, 2006.
Yang, X., Y. Choi, T. Nishida, and S. Thompson, "Gate direct tunneling currents in uniaxial stressed MOSFETs", Proc. 2007 Intl. Workshop on Electron Dev and Semiconductor Technology, pp. 149-152, June, 2007.
Thompson, S., G-Y. Sun, K. Wu, and T. Nishida, "Key Differences for Process-Induced Uniaxial vs. Substrate-Induced Biaxial Stressed Si and Ge Channel MOSFETs", IEDM Technical Digest: IEEE, pp. 221-224, December, 2004.
Suthram, S., Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, A. D. Koehler, A. Acosta, et al., "Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node", 2008 VLSI Symposium on VLSI Technology, pp. 182-183, October, 2008.
Journal Article
Chu, M., T. Nishida, X. Lu, N. Mohta, and S. Thompson, "Comparison between high-field piezoresistive coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress", J. Appl. Phys., vol. 103, pp. 113704-1–113704-7, JUN, 2008.
Lim, J-S., A. Acosta, S. Thompson, G. Bosman, E. Simoen, and T. Nishida, "Effect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors", J. Appl. Phys., vol. 105, pp. 054504-1–054504-11, MAR, 2009.
Koehler, A. D., A. Gupta, M. Chu, S. Parthasarathy, K. J. Linthicum, J. W. Johnson, T. Nishida, and S. Thompson, "Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps", IEEE Electron Device Letters, vol. 31, pp. 3, 07/2010.
Sun, G-Y., Y. Sun, T. Nishida, and S. Thompson, "Hole mobility in silicon inversion layers: Stress and surface orientation", Journal of Applied Physics, vol. 102, pp. 084501-1–084501-7, JAN, 2007.
Choi, Y., T. Nishida, and S. Thompson, "Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors", Appl. Phys. Lett., vol. 92, pp. 173507-1–173507-3, APR, 2008.
Choi, Y., T. Numata, T. Nishida, R. Harris, and S. Thompson, "Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function", J. Appl. Phys., vol. 103, pp. 064510-1–065410-5, MAR, 2008.
Park, H. W., D. J. Cummings, R. Arora, J. A. Pellish, R. Reed, R. D. Schrimpf, D. McMorrow, S. E. Armstrong, U. Roh, T. Nishida, et al., "Laser-Induced Current Transients in Strained-Si Diodes", IEEE Transactions Nuclear Science, vol. 56, pp. 7, 12/2009.
Lim, J., X. Yang, T. Nishida, and S. Thompson, "Measurement of Conduction Band Deformation Potential Constants Using Gate Direct Tunneling Current in n-MOSFETs Under Mechanical Stress", Applied Physics Letters, vol. 89, pp. 073509, AUG, 2006.
Choi, Y., J-S. Lim, T. Numata, T. Nishida, T. Nishida, and S. Thompson, "Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium", Journal of Applied Physics, vol. 102, pp. 104507-1–104507-5, DEC, 2007.
Thompson, S., and T. Nishida, "A new measurement method for trap properties in insulators and semiconductors - Using electric field stimulated trap-to-band tunneling transitions in", Journal of Applied Physics, vol. 70, pp. 6864-6876, DEC, 1991.
Nishida, T., and S. Thompson, "Oxide field and thickness dependence of trap generation in 9-30 nm dry and dry/wet/dry oxides", Journal of Applied Physics, vol. 69, pp. 3986-3994, DEC, 1991.
Sun, Y., S. Thompson, and T. Nishida, "Physics of Strain Effects in Semiconductors and Metal-Oxide-Semiconductor Field-effect Transistors", Journal of Applied Physics, vol. 101, pp. 104503-107524, JAN, 2007.
Suthram, S., J. Ziegert, T. Nishida, and S. Thompson, "Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ( 1.5GPa) Channel Stress", IEEE Electron. Dev. Lett., vol. 28, pp. 58-61, JAN, 2007.
Thompson, S., and T. Nishida, "Positive charge generation in SiO2 by electron-impact-emission of trapped electrons", Journal of Applied Physics, vol. 72, pp. 4683-4695, NOV, 1992.
Choi, Y., H. W. Park, T. Nishida, and S. Thompson, "Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown", J. Appl. Phys., vol. 105, pp. 044503-1–044503-5, FEB, 2009.
Chu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.
Baykan, M., S. Thompson, and T. Nishida, "Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon", Journal of Applied Physics, vol. 108, no. 9, pp. 093716-24, 11/2010.
Son, S. Y., Y. Choi, P. Kumar, H. W. Park, T. Nishida, R. K. Singh, and S. Thompson, "Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors", Appl. Phys. Lett., vol. 93, pp. 153505-1–153505-3, OCT, 2008.
Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson, "Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors", J. Appl. Phys., vol. 109, pp. 9, 06/2011.
Yang, X., J. Lim, G-Y. Sun, K. Wu, T. Nishida, and S. Thompson, "Strain-induced Changes in the Gate Tunneling Currents in p-channel Metal-Oxide-Semiconductor Field-Effect Transistors", Applied Phys. Lett., vol. 88, pp. 052108, JAN, 2006.