Publications

Found 3 results
Author [ Title(Desc)] Type Year
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D
Filangeri, E., and T. Nishida, "Depth profile of thermal donor in boron-doped Czochralski-grown silicon", Journal of Applied Physics, vol. 75, pp. 7931-7934, JUN, 1994.
H
Filangeri, E., and T. Nishida, "Hydrogenation of boron in silicon during low temperature gas and liquid phase processing", Journal of Applied Physics, vol. 76, pp. 332-335, JUL, 1994.
T
Park, H. W., S. K. Dixit, Y. Choi, R. D. Schrimpf, E. Filangeri, T. Nishida, and S. Thompson, "Total Ionizing Dose Effects on Strained HfO2-based nMOSFETs", IEEE Transactions on Nuclear Science, vol. 55, pp. 2981-2985, DEC, 2008.