Publications

Found 155 results
Author Title Type [ Year(Asc)]
Filters: Author is Nishida, Toshikazu  [Clear All Filters]
1991
Nishida, T., and S. Thompson, "Oxide field and thickness dependence of trap generation in 9-30 nm dry and dry/wet/dry oxides", Journal of Applied Physics, vol. 69, pp. 3986-3994, DEC, 1991.
Thompson, S., and T. Nishida, "Tunneling and thermal emission of electrons from a distribution of shallow traps in SiO2", Applied Physics Letters, vol. 58, pp. 1262-1264, DEC, 1991.
1988
Hsu, C-H., T. Nishida, and C-T. Sah, "Observation of threshold oxide electric field for trap generation in oxide films on silicon", Journal of Applied Physics, vol. 63, no. 12, pp. 5882-5884, DEC, 1988.
1987
Nishida, T., and C-T. Sah, "A physically based mobility model for MOSFET numerical simulation", IEEE Trans. Electron Devices, vol. 34, no. 2, pp. 310-320, FEB, 1987.
Lu, S., T. Nishida, and C-T. Sah, "Thermal emission and capture rates of holes at the gold donor level in silicon", Journal of Applied Physics, vol. 62, no. 12, pp. 4773-4780, DEC, 1987.