Publications

Found 155 results
Author Title [ Type(Desc)] Year
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Journal Article
Nishida, T., and C-T. Sah, "A physically based mobility model for MOSFET numerical simulation", IEEE Trans. Electron Devices, vol. 34, no. 2, pp. 310-320, FEB, 1987.
Sun, Y., S. Thompson, and T. Nishida, "Physics of Strain Effects in Semiconductors and Metal-Oxide-Semiconductor Field-effect Transistors", Journal of Applied Physics, vol. 101, pp. 104503-107524, JAN, 2007.
Suthram, S., J. Ziegert, T. Nishida, and S. Thompson, "Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ( 1.5GPa) Channel Stress", IEEE Electron. Dev. Lett., vol. 28, pp. 58-61, JAN, 2007.
Papila, M., R. T. Haftka, T. Nishida, and M. Sheplak, "Piezoresistive Microphone Design Pareto Optimization: Tradeoff between Sensitivity and Noise Floor", J. Microelectromechanical Systems, vol. 15, no. 6, pp. 1632-1643, DEC, 2006.
Thompson, S., and T. Nishida, "Positive charge generation in SiO2 by electron-impact-emission of trapped electrons", Journal of Applied Physics, vol. 72, pp. 4683-4695, NOV, 1992.
Chow, E., A. Partridge, V. Chandrasekaran, M. Sheplak, T. Nishida, C. Quate, and T. Kenny, "Process Compatible Polysilicon-Based Electrical Through-Wafer Interconnects In Silicon Substrates", J. Microelectromechanical Systems, vol. 11, no. 6, pp. 631-640, JUL, 2002.
Dieme, R., J. Zhang, N. G. Rudawski, K. Jones, G. Bosman, M. Sheplak, and T. Nishida, "Process Dependence of 1/f Noise and Defects in Ion Implanted p-Type Piezoresistors", Journal of Applied Physics, vol. 112, 2012.
Choi, Y., H. W. Park, T. Nishida, and S. Thompson, "Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown", J. Appl. Phys., vol. 105, pp. 044503-1–044503-5, FEB, 2009.
Smith, C. S., K. Sondhi, S. C. Mills, J. S. Andrew, H. Z. Fan, T. Nishida, and D. P. Arnold, "Screen-printable and stretchable hard magnetic ink formulated from barium hexaferrite nanoparticles", Journal of Materials Chemistry C, 2020.
Han, K., and T. Nishida, "Sequential substrate and channel hot electron injection to separate oxide and interface traps in n-MOST", Solid-State Electronics, vol. 38, pp. 105-113, JAN, 1995.
Chu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.
Dieme, R., G. Bosman, M. Sheplak, and T. Nishida, "Source of Excess Noise in Silicon Piezoresistive Microphones", J. Acoustical Society of America, vol. 119, pp. 2710-2720, MAY, 2006.
Baykan, M., S. Thompson, and T. Nishida, "Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon", Journal of Applied Physics, vol. 108, no. 9, pp. 093716-24, 11/2010.
Son, S. Y., Y. Choi, P. Kumar, H. W. Park, T. Nishida, R. K. Singh, and S. Thompson, "Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors", Appl. Phys. Lett., vol. 93, pp. 153505-1–153505-3, OCT, 2008.
Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson, "Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors", J. Appl. Phys., vol. 109, pp. 9, 06/2011.
Yang, X., J. Lim, G-Y. Sun, K. Wu, T. Nishida, and S. Thompson, "Strain-induced Changes in the Gate Tunneling Currents in p-channel Metal-Oxide-Semiconductor Field-Effect Transistors", Applied Phys. Lett., vol. 88, pp. 052108, JAN, 2006.
Sanchez, J. C., N. Alba, T. Nishida, C. Batich, and P. Carney, "Structural Modifications in Chronic Microwire Electrodes for Cortical Neuroprosthetics: A Case Study", IEEE Trans. Neural Systems and Rehab. Engr., vol. 14, no. 2, pp. 217-221, JUN, 2006.
Zhao, L., D. Hou, T-M. Usher, T. Iamsasri, C. M. Fancher, J. S. Forrester, T. Nishida, S. Moghaddam, and J. L. Jones, "Structure of 3 at.% and 9 at.% Si-doped HfO 2 from combined refinement of X-ray and neutron diffraction patterns", Journal of Alloys and Compounds, vol. 646, pp. 655 - 661, Jan-10-2015.
Phipps, A., and T. Nishida, "System Modeling of Piezoelectric Energy Harvesters", IEEE Trans. Power Electronics, vol. 27, issue 2, 2012.
Sanchez, J. C., J. Principe, T. Nishida, R. Bashirullah, J. Harris, and J. Fortes, "Technology and Signal Processing for Brain-Machine Interfaces", IEEE Signal Processing Magazine, vol. 25, pp. 29-40, SEP, 2008.
Yang, X., S. Parthasarathy, Y. Sun, A. D. Koehler, T. Nishida, and S. Thompson, "Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms", Appl. Phys. Lett., vol. 93, pp. 243503-1–243503-3, DEC, 2008.
Lu, S., T. Nishida, and C-T. Sah, "Thermal emission and capture rates of holes at the gold donor level in silicon", Journal of Applied Physics, vol. 62, no. 12, pp. 4773-4780, DEC, 1987.
Walters, G., A. Shekhawat, N. G. Rudawski, S. Moghaddam, and T. Nishida, "Tiered deposition of sub-5 nm ferroelectric Hf 1-x Zr x O 2 films on metal and semiconductor substrates", Applied Physics Letters, vol. 112, issue 19, pp. 192901, Jul-05-2018.
Streit, W. J., Q-S. Xue, A. Prasad, V. Sankar, E. Knott, A. T. Dyer, J. R. Reynolds, T. Nishida, G. Shaw, and J. C. Sanchez, "Tissue, Electrical, and Material Responses in Electrode Failure", IEEE Pulse, vol. 3, issue 1, pp. 30 - 33, 01/2012.
Park, H. W., S. K. Dixit, Y. Choi, R. D. Schrimpf, E. Filangeri, T. Nishida, and S. Thompson, "Total Ionizing Dose Effects on Strained HfO2-based nMOSFETs", IEEE Transactions on Nuclear Science, vol. 55, pp. 2981-2985, DEC, 2008.