Publications

Park, H. W., D. J. Cummings, R. Arora, J. A. Pellish, R. Reed, R. D. Schrimpf, D. McMorrow, S. E. Armstrong, U. Roh, T. Nishida, et al., "Laser-Induced Current Transients in Strained-Si Diodes", IEEE Transactions Nuclear Science, vol. 56, pp. 7, 12/2009.

Choi, Y., H. W. Park, T. Nishida, and S. Thompson, "Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown", J. Appl. Phys., vol. 105, pp. 044503-1–044503-5, FEB, 2009.

Son, S. Y., Y. Choi, P. Kumar, H. W. Park, T. Nishida, R. K. Singh, and S. Thompson, "Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors", Appl. Phys. Lett., vol. 93, pp. 153505-1–153505-3, OCT, 2008.

Park, H. W., S. K. Dixit, Y. Choi, R. D. Schrimpf, E. Filangeri, T. Nishida, and S. Thompson, "Total Ionizing Dose Effects on Strained HfO2-based nMOSFETs", IEEE Transactions on Nuclear Science, vol. 55, pp. 2981-2985, DEC, 2008.