Found 29 results
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Conference Paper
Thompson, S., G-Y. Sun, K. Wu, and T. Nishida, "Key Differences for Process-Induced Uniaxial vs. Substrate-Induced Biaxial Stressed Si and Ge Channel MOSFETs", IEDM Technical Digest: IEEE, pp. 221-224, December, 2004.
Yang, X., Y. Choi, T. Nishida, and S. Thompson, "Gate direct tunneling currents in uniaxial stressed MOSFETs", Proc. 2007 Intl. Workshop on Electron Dev and Semiconductor Technology, pp. 149-152, June, 2007.
Thompson, S., S. Suthram, Y. Sun, G-Y. Sun, S. Parthasarathy, M. Chu, and T. Nishida, "Future of Strained Si/Semiconductors in Nanoscale MOSFETs", (invited) Technical Digest 2006 International Electron Devices Meeting, pp. 681-684, December, 2006.
Young, C., M. Baykan, A. Agarwal, H. Madan, K. Akarvardar, C. Hobbs, I. Ok, W. Taylor, C.E. Smith, M.M. Hussain, et al., "Critical Discussion on (100) and (110) Orientation Dependent Transport: nMOS Planar and FinFET", Symposium on VLSI Technology, Kyoto, Japan, 2011.