Publications

Yang, X., J. Lim, G-Y. Sun, K. Wu, T. Nishida, and S. Thompson, "Strain-induced Changes in the Gate Tunneling Currents in p-channel Metal-Oxide-Semiconductor Field-Effect Transistors", Applied Phys. Lett., vol. 88, pp. 052108, JAN, 2006.

Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson, "Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors", J. Appl. Phys., vol. 109, pp. 9, 06/2011.

Son, S. Y., Y. Choi, P. Kumar, H. W. Park, T. Nishida, R. K. Singh, and S. Thompson, "Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors", Appl. Phys. Lett., vol. 93, pp. 153505-1–153505-3, OCT, 2008.

Baykan, M., S. Thompson, and T. Nishida, "Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon", Journal of Applied Physics, vol. 108, no. 9, pp. 093716-24, 11/2010.

Suthram, S., Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, A. D. Koehler, A. Acosta, et al., "Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node", 2008 VLSI Symposium on VLSI Technology, pp. 182-183, October, 2008.

Chu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.