Publications

Sun, G-Y., Y. Sun, T. Nishida, and S. Thompson, "Hole mobility in silicon inversion layers: Stress and surface orientation", Journal of Applied Physics, vol. 102, pp. 084501-1–084501-7, JAN, 2007.

Thompson, S., S. Suthram, Y. Sun, G-Y. Sun, S. Parthasarathy, M. Chu, and T. Nishida, "Future of Strained Si/Semiconductors in Nanoscale MOSFETs", (invited) Technical Digest 2006 International Electron Devices Meeting, pp. 681-684, December, 2006.

Yang, X., J. Lim, G-Y. Sun, K. Wu, T. Nishida, and S. Thompson, "Strain-induced Changes in the Gate Tunneling Currents in p-channel Metal-Oxide-Semiconductor Field-Effect Transistors", Applied Phys. Lett., vol. 88, pp. 052108, JAN, 2006.

Thompson, S., G-Y. Sun, Y. Choi, and T. Nishida, "Uniaxial Process Induced Strained Si: Extending the CMOS Roadmap", IEEE Trans. Electron Dev., vol. 53, pp. 1010-1020, MAY, 2006.

Thompson, S., G-Y. Sun, K. Wu, and T. Nishida, "Key Differences for Process-Induced Uniaxial vs. Substrate-Induced Biaxial Stressed Si and Ge Channel MOSFETs", IEDM Technical Digest: IEEE, pp. 221-224, December, 2004.