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P. Kumar
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Journal Article
Son, S. Y.
,
Y. Choi
,
P. Kumar
,
H. W. Park
,
T. Nishida
,
R. K. Singh
, and
S. Thompson
,
"
Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors
"
,
Appl. Phys. Lett.
, vol. 93, pp. 153505-1–153505-3, OCT, 2008.