Publications

Chu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.

Baykan, M., S. Thompson, and T. Nishida, "Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon", Journal of Applied Physics, vol. 108, no. 9, pp. 093716-24, 11/2010.

Young, C., M. Baykan, A. Agarwal, H. Madan, K. Akarvardar, C. Hobbs, I. Ok, W. Taylor, C.E. Smith, M.M. Hussain, et al., "Critical Discussion on (100) and (110) Orientation Dependent Transport: nMOS Planar and FinFET", Symposium on VLSI Technology, Kyoto, Japan, 2011.

Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson, "Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors", J. Appl. Phys., vol. 109, pp. 9, 06/2011.