Publications

Found 12 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Title is P and Author is Nishida, Toshikazu  [Clear All Filters]
2017
Ghatge, M., G. Walters, T. Nishida, and R. Tabrizian, "Phononic detection of morphological phase transition in atomic-layered Hafnium-Zirconium-Oxide", 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Kaohsiung, Taiwan, IEEE, 2017.
2012
Prasad, A., Q-S. Xue, V. Sankar, T. Nishida, G. Shaw, W. J. Streit, and J. C. Sanchez, "Predicting Microelectrode Array Functionality Using Biotic and Abiotic Metrics in Vivo", 34th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, San Diego, CA, Aug 28-Sep 1, 2012.
Dieme, R., J. Zhang, N. G. Rudawski, K. Jones, G. Bosman, M. Sheplak, and T. Nishida, "Process Dependence of 1/f Noise and Defects in Ion Implanted p-Type Piezoresistors", Journal of Applied Physics, vol. 112, 2012.
2006
Papila, M., R. T. Haftka, T. Nishida, and M. Sheplak, "Piezoresistive Microphone Design Pareto Optimization: Tradeoff between Sensitivity and Noise Floor", J. Microelectromechanical Systems, vol. 15, no. 6, pp. 1632-1643, DEC, 2006.
Ngo, K., A. Phipps, T. Nishida, J. Lin, and S. Xu, "Power Converters for Piezoelectric Energy Extraction", Proceedings of ASME International Mechanical Engineering Congress and Exposition, Paper IMECE2006-14343, November, 2006.
2003
Papila, M., R. T. Haftka, T. Nishida, and M. Sheplak, "Piezoresistive Microphone Design Pareto Optimization: Tradeoff Between Sensitivity and Noise Floor", 44th AIAA/ASME/ASCE/AHS Structures, Structural Dynamics, and Materials Conference, AIAA Paper 2003-1632, Norfolk, VA, April, 2003.
2001
Arnold, D. P., S. Bhardwaj, S. Gururaj, T. Nishida, and M. Sheplak, "A Piezoresistive Microphone for Aeroacoustic Measurements", Proc. of ASME IMECE 2001, International Mechanical Engineering Congress and Exposition, Paper MEMS-23841, vol. 2, New York, NY, November, 2001.
1992
Thompson, S., and T. Nishida, "Positive charge generation in SiO2 by electron-impact-emission of trapped electrons", Journal of Applied Physics, vol. 72, pp. 4683-4695, NOV, 1992.
1987
Nishida, T., and C-T. Sah, "A physically based mobility model for MOSFET numerical simulation", IEEE Trans. Electron Devices, vol. 34, no. 2, pp. 310-320, FEB, 1987.