Publications

Found 1 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Title is F and Author is Rudawski, Nicholas G.  [Clear All Filters]
2015
Lomenzo, P. D., Q. Takmeel, C. M. Fancher, C. Zhou, N. G. Rudawski, S. Moghaddam, J. L. Jones, and T. Nishida, "Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium", IEEE Electron Device Letters, vol. 36, issue 8, pp. 766 - 768, Jan-08-2015.