Publications

Walters, G., A. Shekhawat, N. G. Rudawski, S. Moghaddam, and T. Nishida, "Tiered deposition of sub-5 nm ferroelectric Hf _1-x Zr _x O ₂ films on metal and semiconductor substrates", Applied Physics Letters, vol. 112, issue 19, pp. 192901, Jul-05-2018.

Walters, G., A. Shekhawat, N. G. Rudawski, S. Moghaddam, and T. Nishida, Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates, 2018.

Walters, G., A. Shekhawat, J. Jones, S. Moghaddam, and T. Nishida, Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films, 2020.

Shekhawat, A., G. Walters, C. Chang Chung, Y. Liu, R. Garcia, J. Jones, T. Nishida, and S. Moghaddam, Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films, 2019.

Shekhawat, A., G. Walters, C. Chang Chung, Y. Liu, R. Garcia, J. Jones, T. Nishida, and S. Moghaddam, Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films, 2020.

Shekhawat, A., G. Walters, N. Yang, J. Guo, T. Nishida, and S. Moghaddam, Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions, 2020.