Publications

Found 155 results
Author Title [ Type(Asc)] Year
Filters: Author is Toshikazu Nishida  [Clear All Filters]
Thesis
Martin, D., "Design, fabrication, and characterization of a MEMS dual-backplate capacitive microphone", Deparment of Electrical and Computer Engineering, vol. Ph.D., Gainesville, University of Florida, pp. 250, 2007.
Journal Article
Wang, Y., J. Li, P. Stoica, M. Sheplak, and T. Nishida, "Wideband RELAX and Wideband CLEAN for Aeroacoustic Imaging", J. Acoust. Soc. Am., vol. 115, no. 2, pp. 757-767, MAR, 2004.
Gu, P., T. Nishida, and H. Fan, "The use of polyurethane as an elastomer in thermoplastic microfluidic devices and the study of its creep properties", ELECTROPHORESIS, vol. 35, issue 2-3, pp. 289 - 297, 02/2014, 2013.
Thompson, S., G-Y. Sun, Y. Choi, and T. Nishida, "Uniaxial Process Induced Strained Si: Extending the CMOS Roadmap", IEEE Trans. Electron Dev., vol. 53, pp. 1010-1020, MAY, 2006.
Thompson, S., and T. Nishida, "Tunneling and thermal emission of electrons from a distribution of shallow traps in SiO2", Applied Physics Letters, vol. 58, pp. 1262-1264, DEC, 1991.
Park, H. W., S. K. Dixit, Y. Choi, R. D. Schrimpf, E. Filangeri, T. Nishida, and S. Thompson, "Total Ionizing Dose Effects on Strained HfO2-based nMOSFETs", IEEE Transactions on Nuclear Science, vol. 55, pp. 2981-2985, DEC, 2008.
Streit, W. J., Q-S. Xue, A. Prasad, V. Sankar, E. Knott, A. T. Dyer, J. R. Reynolds, T. Nishida, G. Shaw, and J. C. Sanchez, "Tissue, Electrical, and Material Responses in Electrode Failure", IEEE Pulse, vol. 3, issue 1, pp. 30 - 33, 01/2012.
Walters, G., A. Shekhawat, N. G. Rudawski, S. Moghaddam, and T. Nishida, "Tiered deposition of sub-5 nm ferroelectric Hf 1-x Zr x O 2 films on metal and semiconductor substrates", Applied Physics Letters, vol. 112, issue 19, pp. 192901, Jul-05-2018.
Lu, S., T. Nishida, and C-T. Sah, "Thermal emission and capture rates of holes at the gold donor level in silicon", Journal of Applied Physics, vol. 62, no. 12, pp. 4773-4780, DEC, 1987.
Yang, X., S. Parthasarathy, Y. Sun, A. D. Koehler, T. Nishida, and S. Thompson, "Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms", Appl. Phys. Lett., vol. 93, pp. 243503-1–243503-3, DEC, 2008.
Sanchez, J. C., J. Principe, T. Nishida, R. Bashirullah, J. Harris, and J. Fortes, "Technology and Signal Processing for Brain-Machine Interfaces", IEEE Signal Processing Magazine, vol. 25, pp. 29-40, SEP, 2008.
Phipps, A., and T. Nishida, "System Modeling of Piezoelectric Energy Harvesters", IEEE Trans. Power Electronics, vol. 27, issue 2, 2012.
Zhao, L., D. Hou, T-M. Usher, T. Iamsasri, C. M. Fancher, J. S. Forrester, T. Nishida, S. Moghaddam, and J. L. Jones, "Structure of 3 at.% and 9 at.% Si-doped HfO 2 from combined refinement of X-ray and neutron diffraction patterns", Journal of Alloys and Compounds, vol. 646, pp. 655 - 661, Jan-10-2015.
Sanchez, J. C., N. Alba, T. Nishida, C. Batich, and P. Carney, "Structural Modifications in Chronic Microwire Electrodes for Cortical Neuroprosthetics: A Case Study", IEEE Trans. Neural Systems and Rehab. Engr., vol. 14, no. 2, pp. 217-221, JUN, 2006.
Yang, X., J. Lim, G-Y. Sun, K. Wu, T. Nishida, and S. Thompson, "Strain-induced Changes in the Gate Tunneling Currents in p-channel Metal-Oxide-Semiconductor Field-Effect Transistors", Applied Phys. Lett., vol. 88, pp. 052108, JAN, 2006.
Yang, X., Y. Choi, J-S. Lim, T. Nishida, and S. Thompson, "Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors", J. Appl. Phys., vol. 109, pp. 9, 06/2011.
Son, S. Y., Y. Choi, P. Kumar, H. W. Park, T. Nishida, R. K. Singh, and S. Thompson, "Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors", Appl. Phys. Lett., vol. 93, pp. 153505-1–153505-3, OCT, 2008.
Baykan, M., S. Thompson, and T. Nishida, "Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon", Journal of Applied Physics, vol. 108, no. 9, pp. 093716-24, 11/2010.
Dieme, R., G. Bosman, M. Sheplak, and T. Nishida, "Source of Excess Noise in Silicon Piezoresistive Microphones", J. Acoustical Society of America, vol. 119, pp. 2710-2720, MAY, 2006.
Chu, M., A. D. Koehler, A. Gupta, T. Nishida, and S. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimnensional electron gas density and electron mobility", J. Appl. Phys. , vol. 108, pp. 6, 11/2010.
Han, K., and T. Nishida, "Sequential substrate and channel hot electron injection to separate oxide and interface traps in n-MOST", Solid-State Electronics, vol. 38, pp. 105-113, JAN, 1995.
Smith, C. S., K. Sondhi, S. C. Mills, J. S. Andrew, H. Z. Fan, T. Nishida, and D. P. Arnold, "Screen-printable and stretchable hard magnetic ink formulated from barium hexaferrite nanoparticles", Journal of Materials Chemistry C, 2020.
Choi, Y., H. W. Park, T. Nishida, and S. Thompson, "Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown", J. Appl. Phys., vol. 105, pp. 044503-1–044503-5, FEB, 2009.
Dieme, R., J. Zhang, N. G. Rudawski, K. Jones, G. Bosman, M. Sheplak, and T. Nishida, "Process Dependence of 1/f Noise and Defects in Ion Implanted p-Type Piezoresistors", Journal of Applied Physics, vol. 112, 2012.
Chow, E., A. Partridge, V. Chandrasekaran, M. Sheplak, T. Nishida, C. Quate, and T. Kenny, "Process Compatible Polysilicon-Based Electrical Through-Wafer Interconnects In Silicon Substrates", J. Microelectromechanical Systems, vol. 11, no. 6, pp. 631-640, JUL, 2002.