Title: GaAs Integration for Next-Gen Computing: 100× Efficiency, 100 GHz Bandwidth, and Scalable Sensing
by Dr. Hamed Dalir
Zoom: https://ufl.zoom.us/j/92413229868
Abstract: We are building a new generation of integrated photonics by leveraging the GaAs platform to power future computing and sensing technologies. Our goal is to achieve ultra-low power communication (<1 femtojoule per bit) and ultra-fast operation (>100 GHz)—performance that goes far beyond what today’s silicon systems can deliver.
At the core of our approach is a zig-zag photonic structure that shrinks device footprint by up to 1000× while preserving signal quality. A key innovation is the introduction of unidirectional on-chip isolation and coupling, which allows a Transverse Cavity Surface Emitting Laser (TCSEL) to connect seamlessly with a modulator and waveguide. This architecture achieves no noticeable insertion loss, ensures high linearity, and enables terabit-scale throughput.
But we are going beyond device-level breakthroughs. Our work lays the foundation for a scalable III–V integration platform that can cut power consumption by over 90%, extend device lifetimes to more than a billion cycles, and support sub-millimeter integration for compact, deployable systems. Importantly, our strategy moves from lab to fab by using standard microlithography, which boosts yield, lowers cost, and makes mass production practical.
