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DTSTART:20151101T020000
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TZOFFSETTO:-0500
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DTSTART:20150308T020000
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BEGIN:VEVENT
UID:calendar.383.field_event_date.0@www.img.ufl.edu
DTSTAMP:20260415T201548Z
CREATED:20150916T181730Z
DESCRIPTION:Patrick Lomenzo will present on ferroelectricity in HfO2-based 
 thin films:\n\n\n\n	Ferroelectricity in HfO2-based thin films offers an int
 riguing pathway toward the realization of ferroelectric devices for next g
 eneration memory technologies. Understanding the reliability characteristi
 cs and underlying defects of HfO2 ferroelectrics is of critical importance
  for its successful adoption in emerging memory devices. The observation o
 f asymmetric ferroelectric properties of HfO2 thin films with TaN electrod
 es is discussed in the context of charged defects and the chemical propert
 ies of the electrode interfaces.\n\n\nEvent date: \n\nFriday\, September 1
 8\, 2015 - 3:30pm\n\nEvent location: \n\n234 Larsen
DTSTART;TZID=America/New_York:20150918T153000
DTEND;TZID=America/New_York:20150918T153000
LAST-MODIFIED:20150916T182158Z
LOCATION:234 Larsen
SUMMARY:IMG Seminar Series: Origins of Asymmetry in Ferroelectric Si:HfO2 T
 hin Films with TaN Electrodes
URL;TYPE=URI:https://www.img.ufl.edu/events/383/img-seminar-series-origins-
 asymmetry-ferroelectric-sihfo2-thin-films-tan-electrodes
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